BLW78 RF BJT
Datasheet: View
Stock
- 213 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 2(Typ)@3A@15A | V |
| Maximum Collector Emitter Voltage | 35 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 370(Typ) | MHz |
| Minimum DC Current Gain | 20@5A@5V | |
| Number of Elements per Chip | 1 | |
| Output Power | 100 | W |
| Type | NPN |