BLW80 RF BJT
Datasheet: View
Stock
- 400 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.75(Typ)@0.3A@1.5A | V |
| Maximum Collector Emitter Voltage | 17 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 1750(Typ) | MHz |
| Minimum DC Current Gain | 10@0.5A@5V | |
| Number of Elements per Chip | 1 | |
| Output Power | 4 | W |
| Type | NPN |