BLW96 RF BJT
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- 2 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.9(Typ)@4A@20A | V |
| Maximum Collector Emitter Voltage | 55 | V |
| Maximum DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 245(Typ) | MHz |
| Minimum DC Current Gain | 15@7A@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 200 | W |
| Type | NPN |