BLW98 RF BJT
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Stock
- 162 NEW JERSEY SEMICONDUCTOR
- 1 PHILIPS
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.25(Typ)@100mA@500mA | V |
| Maximum Collector Emitter Voltage | 27 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 2500(Typ) | MHz |
| Minimum DC Current Gain | 15@850mA@25V | |
| Number of Elements per Chip | 1 | |
| Output Power | 4.4(Typ) | W |
| Type | NPN |