BSR51 Darlington BJT
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- 62 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 60V 1A 3-Pin TO-92
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 1.9@0.5mA@0.5A | 2.2@1mA@1A |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@150mA@10V | 2000@500mA@10V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 200 | MHz |