BSS71 GP BJT

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  • 41510 MOTOROLA
  • 5751 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 200V 0.5A 3-Pin TO-18

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 0.3@1mA@10mA|0.4@3mA@30mA|0.5@5mA@50mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 500 mW
Maximum Transition Frequency 200 MHz
Type NPN