BSW67 GP BJT
Datasheet: View
Stock
- 104 NEW JERSEY SEMICONDUCTOR
- 6 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@10mA@100mA | 0.4@50mA@500mA |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Maximum Transition Frequency | 130(Typ) | MHz |
| Type | NPN |