BSW68 GP BJT

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  • 185 NEW JERSEY SEMICONDUCTOR
  • 5 SGS
  • 13 ST MICRO

Trans GP BJT NPN 150V 1A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 0.15@10mA@100mA 0.4@50mA@500mA
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 130(Typ) MHz
Type NPN