BSX45 GP BJT
Datasheet: View
Stock
- 11611 NEW JERSEY SEMICONDUCTOR
- 13 PHILIPS
- 8 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 6250 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |