BSX47-16 GP BJT

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  • 11258 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.9@25mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 6250 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN