BSX51A GP BJT

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  • 74 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 0.3@15mA@150mA|0.5@50mA@500mA|1@15mA@150mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 250(Min) MHz
Type NPN