BSX52 GP BJT
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- 31 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Power Dissipation | 300 | mW |
| Maximum Transition Frequency | 300(Typ) | MHz |
| Type | NPN |