BSX63-10 GP BJT

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  • 12048 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 3A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.7@100mA@1A 0.8@200mA@2A
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Maximum Transition Frequency 30(Min) MHz
Type NPN