BU100 GP BJT

default part image

Datasheet: View

Stock

  • 6110 NEW JERSEY SEMICONDUCTOR
  • 90 SGS

Trans GP BJT NPN 60V 10A

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 3.3@2.5A@8A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 15000 mW
Maximum Transition Frequency 0.1(Min) MHz
Type NPN