BU103A GP BJT
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- 3625 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 1A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@20mA@0.2A | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | NPN |