BU104 GP BJT

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  • 4225 NEW JERSEY SEMICONDUCTOR
  • 4 SOLID SATE

Trans GP BJT NPN 150V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 2.5@1A@7A V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 85000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN