BU108 GP BJT
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Stock
- 1 MOTOROLA
- 4626 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 750V 5A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 1500 | V |
| Maximum Collector Emitter Saturation Voltage | 5@2A@4.5A | V |
| Maximum Collector Emitter Voltage | 750 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 115 | ﾡC |
| Maximum Power Dissipation | 12500 | mW |
| Type | NPN |