BU111 GP BJT

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  • 4079 NEW JERSEY SEMICONDUCTOR
  • 20 SIEMENS

Trans GP BJT NPN 300V 6A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500 V
Maximum Collector Emitter Saturation Voltage 1.5@0.5A@2.5A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 50000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN