BU113 GP BJT

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  • 41200 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 3@2A@10A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 6(Typ) MHz
Type NPN