BU133 GP BJT

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  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 3A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 750 V
Maximum Collector Emitter Saturation Voltage 1.5@0.5A@2A V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 8(Typ) MHz
Type NPN