BU1706A GP BJT

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  • 1587 NEW JERSEY SEMICONDUCTOR
  • 450 PHILIPS

Trans GP BJT NPN 850V 5A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.3A@1.5A V
Maximum Collector Emitter Voltage 850 V
Maximum DC Collector Current 5 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 100000 mW
Type NPN