BU180 Darlington BJT

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  • 4550 NEW JERSEY SEMICONDUCTOR

Trans Darlington NPN 200V 10A

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 2@20mA@4A V
Maximum Collector Base Voltage 320 V
Maximum Collector Emitter Voltage 200 V
Maximum Continuous DC Collector Current 10 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 150 ᄀC
Minimum DC Current Gain 200@5A@5V
Minimum Operating Temperature -55 ᄀC
Number of Elements per Chip 1
Type NPN