BU204 GP BJT

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  • 35 MOTOROLA
  • 12157 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 600V 3A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 5@1A@2A V
Maximum Collector Emitter Voltage 600 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 115 °C
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 4(Typ) MHz
Type NPN