BU207 GP BJT
Datasheet: View
Stock
- 1 MOTOROLA
- 7539 NEW JERSEY SEMICONDUCTOR
- 207 TELEFUNKIN
- 301 TOSHIBA
- 33 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 5@2A@4.5A | V |
| Maximum Collector Emitter Voltage | 600 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 115 | °C |
| Maximum Power Dissipation | 12500 | mW |
| Maximum Transition Frequency | 4(Typ) | MHz |
| Type | NPN |