BU209 GP BJT

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  • 4125 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 4A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 5@1.3A@3A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 115 ᄀC
Maximum Power Dissipation 12500 mW
Maximum Transition Frequency 7(Typ) MHz
Type NPN