BU2520AX GP BJT

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  • 2365 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) TOP-3D

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 5@1.2A@6A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7.5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 45000 mW
Type NPN