BU2532AW GP BJT
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- 832 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 800V 16A 3-Pin(3+Tab) TO-247
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 5@1.17A@7A | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 16 | A |
| Maximum Emitter Base Voltage | 7.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |