BU326 GP BJT
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- 9000 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 375V 8A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 800 | V |
| Maximum Collector Emitter Saturation Voltage | \1.5@0.5A@2.5A | 3@1.25A@4A\ |
| Maximum Collector Emitter Voltage | 375 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |