BU326A GP BJT
Datasheet: View
Stock
- 5474 NEW JERSEY SEMICONDUCTOR
- 8 RF POWER
- 1499 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.5A@2.5A|3@1.25A@4A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Type | NPN |