BU326A GP BJT

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  • 5474 NEW JERSEY SEMICONDUCTOR
  • 8 RF POWER
  • 1524 SOLITRON

Trans GP BJT NPN 400V 6A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@0.5A@2.5A|3@1.25A@4A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 75000 mW
Type NPN