BU406D GP BJT

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  • 4205 NEW JERSEY SEMICONDUCTOR
  • 35 SGS
  • 1 ST MICRO
  • 6 WORLD WIDE

Trans GP BJT NPN 200V 10A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 1@0.65A@5A V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN