BU426 GP BJT

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  • 4389 NEW JERSEY SEMICONDUCTOR
  • 1 SGS

Trans GP BJT NPN 375V 6A 3-Pin(3+Tab) TO-218

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage \1.5@0.5A@2.5A 3@1.25A@4A\
Maximum Collector Emitter Voltage 375 V
Maximum DC Collector Current 6 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 113000 mW
Type NPN