BU4530AW GP BJT

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  • 1263 NEW JERSEY SEMICONDUCTOR
  • 1800 PHILIPS

Trans GP BJT NPN 800V 16A 3-Pin(3+Tab) TO-247

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 3@2.22A@10A V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 16 A
Maximum Emitter Base Voltage 7.5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN