BU508AW GP BJT

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  • 3086 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-247 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@1.6A@4.5A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN