BU508DF GP BJT

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  • 5532 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-247F

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@1.6A@4.5A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 8 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 34000 mW
Maximum Transition Frequency 7(Typ) MHz
Type NPN