BU522A Darlington BJT

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  • 4965 NEW JERSEY SEMICONDUCTOR

Trans Darlington NPN 425V 7A

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 2.5@80mA@4A V
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Voltage 425 V
Maximum Continuous DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Minimum DC Current Gain 250@2.5A@5V
Minimum Operating Temperature -55 ᄀC
Number of Elements per Chip 1
Type NPN
Typical Current Gain Bandwidth 7.5 MHz