BU522A Darlington BJT
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- 4965 NEW JERSEY SEMICONDUCTOR
Trans Darlington NPN 425V 7A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@80mA@4A | V |
| Maximum Collector Base Voltage | 450 | V |
| Maximum Collector Emitter Voltage | 425 | V |
| Maximum Continuous DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Minimum DC Current Gain | 250@2.5A@5V | |
| Minimum Operating Temperature | -55 | ﾡC |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 7.5 | MHz |