BU536 GP BJT

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  • 141 CONTINENTAL DEVICES
  • 3185 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 480V 8A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 2@1A@4A V
Maximum Collector Emitter Voltage 480 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 62000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN