BU607D GP BJT

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  • 5693 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 150V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 330 V
Maximum Collector Emitter Saturation Voltage 1@0.65A@5A V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN