BU608 GP BJT

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  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 200V 7A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 1@1.2A@6A V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN