BU626A GP BJT

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  • 4150 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1000 V
Maximum Collector Emitter Saturation Voltage 3.3@2.5A@8A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 175 ᄀC
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 6(Min) MHz
Type NPN