BU705D GP BJT

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  • 5264 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 2.5A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 5@0.9A@2A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 2.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 75000 mW
Maximum Transition Frequency 7(Typ) MHz
Type NPN