BU706DF GP BJT

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  • 5394 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 700V 5A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 5@1.33A@3A V
Maximum Collector Emitter Voltage 700 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 32000 mW
Type NPN