BUF410 GP BJT

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  • 100 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-218 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2.8@0.5A@5A 2@2A@10A
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN