BUF420A GP BJT

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  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 30A 3-Pin(3+Tab) TO-218

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.8(Typ)@1A@10A 0.5(Typ)@2A@20A
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 200000 mW
Type NPN