BUR51 GP BJT
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- 2107 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 200V 60A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 300 | V |
| Maximum Collector Emitter Saturation Voltage | 1@2A@30A | 1.5@5A@50A |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 60 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 350000 | mW |
| Maximum Transition Frequency | 16(Typ) | MHz |
| Type | NPN |