BUR52 GP BJT
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Stock
- 1353 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 1@2A@25A|1.5@4A@40A | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 60 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 350000 | mW |
| Maximum Transition Frequency | 16 | MHz |
| Type | NPN |