BUT100 GP BJT
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- 0 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 125V 50A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 300 | V |
| Maximum Collector Emitter Saturation Voltage | 0.9@10A@100A | V |
| Maximum Collector Emitter Voltage | 125 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 300000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | PNP |