BUT11 GP BJT

default part image

Datasheet: View

Stock

  • 3020 NEW JERSEY SEMICONDUCTOR
  • 21 PHILIPS

Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220AB Bulk

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 850 V
Maximum Collector Emitter Saturation Voltage 1.5@0.6A@3A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 100000 mW
Type NPN