BUT11F GP BJT

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  • 1426 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220F

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 850 V
Maximum Collector Emitter Saturation Voltage 1.5@0.6A@3A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Type NPN