BUT12 GP BJT

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  • 1645 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 20A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@1.2A@6A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 20 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN