BUT12A GP BJT

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  • 35 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1000 V
Maximum Collector Emitter Saturation Voltage 1.5@1.2A@6A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 8 A
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 100000 mW
Type NPN